onsemi NSVBCW32LT1G

onsemi · Transistors (BJTs) · MPN NSVBCW32LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO32V
DC Current Gain200
Pd - Power Dissipation225mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

32V 200 NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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