onsemi NSVBC857BTT1G

onsemi · Transistors (BJTs) · MPN NSVBC857BTT1G

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain220
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))650mV

Technical details

45V 220 PNP 100mA SOT-416 Single Bipolar Transistors RoHS

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