onsemi NSVBC846BM3T5G

onsemi · Transistors (BJTs) · MPN NSVBC846BM3T5G

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain150
Pd - Power Dissipation265mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 265mW Surface Mount SOT-723

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