onsemi · Transistors (BJTs) · MPN NSVBC123JPDXV6T1G
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| DC Current Gain | 80 |
|---|---|
| Input Resistor | 2.9kΩ |
| Resistor Ratio | 0.056 |
| Number | - |
| Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
80 500mW 100mA 50V SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS