onsemi NSV60600MZ4T3G

onsemi · Transistors (BJTs) · MPN NSV60600MZ4T3G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain360
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))350mV

Technical details

Bipolar (BJT) Transistor PNP 60V 6A 2W Surface Mount SOT-223

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