onsemi NSV60200DMTWTBG

onsemi · Transistors (BJTs) · MPN NSV60200DMTWTBG

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Pd - Power Dissipation2.27W
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)155MHz
typePNP
Vce Saturation(VCE(sat))365mV
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃

Technical details

80 2.27W 60V PNP 2A WDFN-6-EP(2x2) Bipolar Transistor Arrays RoHS

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