onsemi · Transistors (BJTs) · MPN NSV60101DMTWTBG
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 55 |
| Pd - Power Dissipation | 2.27W |
| Collector - Emitter Voltage VCEO | 60V |
| Transition frequency(fT) | 180MHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | 130mV |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
55 2.27W 60V NPN 1A WDFN-6-EP(2x2) Bipolar Transistor Arrays RoHS