onsemi NSV40200LT1G

onsemi · Transistors (BJTs) · MPN NSV40200LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO7V
DC Current Gain150
Pd - Power Dissipation540mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))95mV

Technical details

Bipolar (BJT) Transistor PNP 40V 2A 100MHz 0.54W Surface Mount SOT-23

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