onsemi NSV20201LT1G

onsemi · Transistors (BJTs) · MPN NSV20201LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain200
Pd - Power Dissipation460mW
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))72mV

Technical details

20V 200 NPN 2A SOT-23 Single Bipolar Transistors RoHS

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