onsemi · Transistors (BJTs) · MPN NSV1C200LT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 120MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 150 |
| Pd - Power Dissipation | 710mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 100V 2A 120MHz 710mW Surface Mount SOT-23