onsemi · Transistors (BJTs) · MPN NSTB60BDW1T1G
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| DC Current Gain | 80 |
|---|---|
| Input Resistor | 28.6kΩ |
| Resistor Ratio | 2.55 |
| Number | - |
| Pd - Power Dissipation | 385mW |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
80 385mW 150mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS