onsemi NST857BDP6T5G

onsemi · Transistors (BJTs) · MPN NST857BDP6T5G

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Specifications

Current - Collector Cutoff15nA
DC Current Gain220
Pd - Power Dissipation420mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 420mW Surface Mount SOT-963-6

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