onsemi · Transistors (BJTs) · MPN NST847BPDP6T5G
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| Current - Collector Cutoff | 5uA |
|---|---|
| DC Current Gain | 200 |
| Pd - Power Dissipation | 350mW |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 100MHz |
| type | NPN+PNP |
| Vce Saturation(VCE(sat)) | 600mV |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 350mW Surface Mount SOT-963-6