onsemi NST489AMT1G

onsemi · Transistors (BJTs) · MPN NST489AMT1G

No reviews yet — be the first to review onsemi NST489AMT1G.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation1.18W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 300MHz 1.18W Surface Mount TSOP-6

Related Transistors (BJTs)