onsemi NST4617MX2T5G

onsemi · Transistors (BJTs) · MPN NST4617MX2T5G

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)112MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Pd - Power Dissipation166mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

50V 120 NPN 100mA X2DFN-3(1x0.6) Single Bipolar Transistors RoHS

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