onsemi · Transistors (BJTs) · MPN NST3906DXV6T1G
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| Current - Collector Cutoff | 50nA |
|---|---|
| DC Current Gain | 100 |
| Collector - Emitter Voltage VCEO | 40V |
| Pd - Power Dissipation | 357mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 250MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -55℃~+150℃ |
100 40V 357mW PNP 200mA SOT-563 Bipolar Transistor Arrays RoHS