onsemi NST3906DP6T5G

onsemi · Transistors (BJTs) · MPN NST3906DP6T5G

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation420mW
Emitter-Base Voltage VEBO5V
Configuration-
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))400mV
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP+PNP 40V 200mA 250MHz 420mW Surface Mount SOT-963-6

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