onsemi NSS60200DMTTBG

onsemi · Transistors (BJTs) · MPN NSS60200DMTTBG

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)155MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain80
Pd - Power Dissipation2.27W
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))365mV

Technical details

60V 80 PNP 2A WDFN-6-EP(2x2) Single Bipolar Transistors RoHS

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