onsemi · Transistors (BJTs) · MPN NSS60101DMTTBG
No reviews yet — be the first to review onsemi NSS60101DMTTBG.
| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 150 |
| Pd - Power Dissipation | 2.27W |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 180MHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | 130mV |
| Number | 2 NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 60V 1A 180MHz 2.27W Surface Mount WDFN-6-EP(2x2)