onsemi · Transistors (BJTs) · MPN NSS40302PDR2G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 200 |
| Collector - Emitter Voltage VCEO | 40V |
| Pd - Power Dissipation | 576mW |
| Emitter-Base Voltage VEBO | 7V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 8mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 6A |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 40V 6A 100MHz 576mW Surface Mount SOIC-8