onsemi NSS30201MR6T1G

onsemi · Transistors (BJTs) · MPN NSS30201MR6T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain500
Pd - Power Dissipation1.18W
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))50mV

Technical details

30V 500 NPN 2A TSOP-6-1.5mm Single Bipolar Transistors RoHS

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