onsemi NSS30070MR6T1G

onsemi · Transistors (BJTs) · MPN NSS30070MR6T1G

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
DC Current Gain150
Pd - Power Dissipation342mW
typePNP
Current - Collector(Ic)700mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

30V 150 PNP 700mA SC-74-6 Single Bipolar Transistors RoHS

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