onsemi NSS20601CF8T1G

onsemi · Transistors (BJTs) · MPN NSS20601CF8T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain360
Pd - Power Dissipation1.4W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))110mV

Technical details

Bipolar (BJT) Transistor NPN 20V 6A 140MHz 1.4W Surface Mount SMD-8P,3.2x1.6mm

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