onsemi NSS20300MR6T1G

onsemi · Transistors (BJTs) · MPN NSS20300MR6T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.06W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))145mV

Technical details

Bipolar (BJT) Transistor PNP 20V 3A 1.06W Surface Mount TSOP-6

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