onsemi NSS20201LT1G

onsemi · Transistors (BJTs) · MPN NSS20201LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation540mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))72mV

Technical details

Bipolar (BJT) Transistor NPN 20V 2A 150MHz 540mW Surface Mount SOT-23

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