onsemi · Transistors (BJTs) · MPN NSS20101JT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 350MHz |
| Collector - Emitter Voltage VCEO | 20V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 255mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 15mV |
Bipolar (BJT) Transistor NPN 20V 1A 350MHz 255mW Surface Mount SC-89-3