onsemi · Transistors (BJTs) · MPN NSS1C300ET4G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 180 |
| Pd - Power Dissipation | 2.1W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 70mV |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor PNP 100V 3A 100MHz 2.1W Surface Mount DPAK