onsemi NSS1C201MZ4T1G

onsemi · Transistors (BJTs) · MPN NSS1C201MZ4T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain150
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))30mV

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 100MHz 2W Surface Mount SOT-223

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