onsemi NSS1C200MZ4T1G

onsemi · Transistors (BJTs) · MPN NSS1C200MZ4T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain120
Pd - Power Dissipation800mW
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))220mV

Technical details

100V 120 PNP 2A SOT-223-3 Single Bipolar Transistors RoHS

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