onsemi NSS12501UW3T2G

onsemi · Transistors (BJTs) · MPN NSS12501UW3T2G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain200
Pd - Power Dissipation875mW
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

12V 200 NPN 5A W-DFN-3(2x2) Single Bipolar Transistors RoHS

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