onsemi NSS12200LT1G

onsemi · Transistors (BJTs) · MPN NSS12200LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain250
Pd - Power Dissipation460mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

12V 250 1 PNP PNP 2A SOT-23 Single Bipolar Transistors RoHS

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