onsemi NSS12100XV6T1G

onsemi · Transistors (BJTs) · MPN NSS12100XV6T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation650mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))440mV

Technical details

12V 200 1 PNP PNP 1A SOT-563 Single Bipolar Transistors RoHS

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