onsemi NSS12100UW3TCG

onsemi · Transistors (BJTs) · MPN NSS12100UW3TCG

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation740mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))30mV

Technical details

Bipolar (BJT) Transistor PNP 12V 1A 200MHz 740mW Surface Mount DFN-3L(2x2)

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