onsemi NSM80100MT1G

onsemi · Transistors (BJTs) · MPN NSM80100MT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO4V
DC Current Gain120
Pd - Power Dissipation400mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 400mW Surface Mount SC-74-6

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