onsemi · Transistors (BJTs) · MPN NSL12AWT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 12V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 650mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 2A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 290mV |
12V 100 1 PNP PNP 2A SOT-363 Single Bipolar Transistors RoHS