onsemi NSBC144EDXV6T1G

onsemi · Transistors (BJTs) · MPN NSBC144EDXV6T1G

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor47kΩ
Resistor Ratio1
Pd - Power Dissipation500mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)1.9V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 500mW Surface Mount SOT-563

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