onsemi · Transistors (BJTs) · MPN NSBC123JPDP6T5G
No reviews yet — be the first to review onsemi NSBC123JPDP6T5G.
| DC Current Gain | 80 |
|---|---|
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.047 |
| Number | - |
| Pd - Power Dissipation | 339mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
80 339mW 100mA 50V SOT-963 Bipolar Transistor Arrays, Pre-Biased RoHS