onsemi NSBC115EPDXV6T1G

onsemi · Transistors (BJTs) · MPN NSBC115EPDXV6T1G

No reviews yet — be the first to review onsemi NSBC115EPDXV6T1G.

Specifications

DC Current Gain80
Number-
Pd - Power Dissipation357mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

80 357mW 100mA 50V SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)