onsemi · Transistors (BJTs) · MPN NSBC114YPDP6T5G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 13kΩ |
| Resistor Ratio | 0.25 |
| Pd - Power Dissipation | 231mW |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 800mV@1mA,200mV;900mV@1mA,200mA |
| Current - Collector(Ic) | 100mA |
80 231mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-963-6 Bipolar Transistor Arrays, Pre-Biased RoHS