onsemi NSBC114TDXV6T1G

onsemi · Transistors (BJTs) · MPN NSBC114TDXV6T1G

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Specifications

DC Current Gain160
Input Resistor13kΩ
Number-
Pd - Power Dissipation500mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

160 500mW 100mA 50V SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS

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