onsemi NSBA124EF3T5G

onsemi · Transistors (BJTs) · MPN NSBA124EF3T5G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain60
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation254mW

Technical details

50V 60 100mA 254mW PNP SOT-1123 Single, Pre-Biased Bipolar Transistors RoHS

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