onsemi · Transistors (BJTs) · MPN NSBA123TDP6T5G
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| DC Current Gain | 160 |
|---|---|
| Input Resistor | 2.2kΩ |
| Number | - |
| Pd - Power Dissipation | 269mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
160 269mW 100mA 50V SOT-963 Bipolar Transistor Arrays, Pre-Biased RoHS