onsemi · Transistors (BJTs) · MPN NSBA123JDXV6T5G
No reviews yet — be the first to review onsemi NSBA123JDXV6T5G.
| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 80 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.9kΩ |
| Resistor Ratio | 0.056 |
| Number | - |
| Pd - Power Dissipation | 357mW |
50V 80 100mA 357mW SOT-563-6 Single, Pre-Biased Bipolar Transistors RoHS