onsemi NSBA115TDP6T5G

onsemi · Transistors (BJTs) · MPN NSBA115TDP6T5G

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Specifications

DC Current Gain160
Input Resistor100kΩ
Number-
Pd - Power Dissipation269mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

160 269mW 100mA 50V SOT-963 Bipolar Transistor Arrays, Pre-Biased RoHS

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