onsemi NSBA115EDXV6T1

onsemi · Transistors (BJTs) · MPN NSBA115EDXV6T1

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Specifications

Input Resistor100kΩ
Resistor Ratio1
Pd - Power Dissipation500mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

500mW 100mA 50V Bipolar Transistor Arrays, Pre-Biased RoHS

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