onsemi · Transistors (BJTs) · MPN NSBA114YF3T5G
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 80 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 13kΩ |
| Resistor Ratio | 0.25 |
| Number | - |
| Pd - Power Dissipation | 297mW |
50V 80 100mA 297mW SOT-1123-3 Single, Pre-Biased Bipolar Transistors RoHS