onsemi NJW44H11G

onsemi · Transistors (BJTs) · MPN NJW44H11G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)85MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain80
Pd - Power Dissipation120W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))1V
Operating Temperature-65℃~+150℃

Technical details

80V 80 NPN 10A TO-3P-3 Single Bipolar Transistors RoHS

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