onsemi NJW0302G

onsemi · Transistors (BJTs) · MPN NJW0302G

No reviews yet — be the first to review onsemi NJW0302G.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation150W
Number1 PNP
typePNP
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 250V 15A 30MHz 150W Through Hole TO-3P

Related Transistors (BJTs)