onsemi NJW0281G

onsemi · Transistors (BJTs) · MPN NJW0281G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation150W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P

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