onsemi NJVMJD47T4G

onsemi · Transistors (BJTs) · MPN NJVMJD47T4G

No reviews yet — be the first to review onsemi NJVMJD47T4G.

Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO250V
DC Current Gain30
Pd - Power Dissipation1.56W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

250V 30 NPN 1A DPAK Single Bipolar Transistors RoHS

Related Transistors (BJTs)